Copper wires (small branching structures, above) grown by applying a voltage to copper-doped tungsten could be the key to a new type of ultradense memory.
Credit: Chakku Gopalan

From the Labs

From the Labs: Nanotechnology

  • January/February 2008
  • By Kevin Bullis

New publications, experiments and breakthroughs in nanotechnology--and what they mean.

   

Terabyte Nonvolatile Memory
A Flash ­alternative ­could store a ­terabyte of data

Source: "Bipolar and Unipolar Resistive Switching in Cu-Doped SiO2"
Christina Schindler et al.
IEEE Transactions on Electron Devices 54: 2762-2768

Results: Using silicon and copper, researchers have made a new type of ­memory that stores information by harnessing negative and positive charges to assemble and disassemble nanoscale metallic wires. Each ­memory cell consists of two electrodes separated by an electrolyte doped with copper ions. When a cell is in the off state, little current passes from one electrode to the other. When a "writing" voltage is applied, the ions line up and form a filament that bridges the electrodes, markedly increasing current. Reversing the voltage causes the filament to dissolve.

 

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